Static information storage and retrieval – Read/write circuit – Precharge
Patent
1999-07-21
2000-10-10
Hoang, Huan
Static information storage and retrieval
Read/write circuit
Precharge
365194, 365202, 365205, G11C 700
Patent
active
061308471
ABSTRACT:
A semiconductor memory device including a fast write recovery circuit. The semiconductor memory device has a memory array, a sense amplifier and the fast write recovery circuit. Before the end of a precharging operation, a last bit of data is written into a memory cell of the memory by the sense amplifier, as well as by the fast write recovery circuit from the other end. Thus, the time required for writing the last bit of data is shortened to prevent from writing a fragmental data into the memory cell in a transient write cycle. Furthermore, a write operation with a high speed can be executed with being restricted by layout.
REFERENCES:
patent: 5467312 (1995-11-01), Albon et al.
patent: 5539701 (1996-07-01), Shimizu
patent: 5761123 (1998-06-01), Kim et al.
patent: 5777935 (1998-07-01), Patelakis et al.
Huang Shih-Huang
Lu Hsin-Pang
Hoang Huan
United Microelectronics Corp.
United Silicon Incorporated
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