Semiconductor device with fast write recovery circuit

Static information storage and retrieval – Read/write circuit – Precharge

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365194, 365202, 365205, G11C 700

Patent

active

061308471

ABSTRACT:
A semiconductor memory device including a fast write recovery circuit. The semiconductor memory device has a memory array, a sense amplifier and the fast write recovery circuit. Before the end of a precharging operation, a last bit of data is written into a memory cell of the memory by the sense amplifier, as well as by the fast write recovery circuit from the other end. Thus, the time required for writing the last bit of data is shortened to prevent from writing a fragmental data into the memory cell in a transient write cycle. Furthermore, a write operation with a high speed can be executed with being restricted by layout.

REFERENCES:
patent: 5467312 (1995-11-01), Albon et al.
patent: 5539701 (1996-07-01), Shimizu
patent: 5761123 (1998-06-01), Kim et al.
patent: 5777935 (1998-07-01), Patelakis et al.

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