Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-02
2006-05-02
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S648000
Reexamination Certificate
active
07037827
ABSTRACT:
A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.
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patent: 2000297998 (2001-10-01), None
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“Epitaxial Growth of TiSi2 (C49) on (001) Si by Rapid Thermal Annealing” LiMing Wang et al., Oct. 1997, Jpn. J. Appl. Phys. vol. 36 pp. 6475-6480.
Lee Moon-Keun
Lee Tae-Kwon
Lee Yoon-Jik
Park Tae-Su
Yang Jun-Mo
Blakely Sokoloff
Hynix / Semiconductor Inc.
Smith Bradley K.
Taylor & Zafman
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