Semiconductor device with dual gate oxides

Details Semiconductor device with dual gate oxides Semiconductor device with dual gate oxides

2007-08-21

2007-08-21

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S294000, C438S666000, C438S588000, C438S981000, C257SE21010, C257SE21293, C257SE21292, C257SE21302

Reexamination Certificate

active

10973852

ABSTRACT:
A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.

REFERENCES:
patent: 6091109 (2000-07-01), Hasegawa
patent: 6165918 (2000-12-01), Jia et al.
patent: 6228721 (2001-05-01), Yu
patent: 6271092 (2001-08-01), Lee
patent: 6420222 (2002-07-01), Watanabe
patent: 6686246 (2004-02-01), Gonzalez
patent: 2005/0167761 (2005-08-01), Watanabe

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