Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-20
1999-12-21
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438240, 438241, 438253, H02L 218238, H02L 218242
Patent
active
060048395
ABSTRACT:
In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate insulating film to the MOS transistors. The laminate insulating film is composed of a first insulating film and a second insulating film. A capacitor section is formed on the laminate insulating film and the capacitor section is composed of an upper electrode, a dielectric film and a lower electrode. A third insulating film is formed on the laminate insulating film and the capacitor section. A wiring pattern is formed on the third insulating film to partially penetrate the second insulating film connect to the plurality of conductive plugs. A wiring pattern may be disposed in the laminate insulating film to connect at least two of the plurality of conductive plugs.
REFERENCES:
patent: 4439270 (1984-03-01), Powell et al.
patent: 4577390 (1986-03-01), Haken
patent: 4617193 (1986-10-01), Wu
patent: 4994893 (1991-02-01), Ozaki et al.
patent: 5055966 (1991-10-01), Smith et al.
patent: 5187122 (1993-02-01), Bonis
patent: 5252504 (1993-10-01), Lowrey et al.
patent: 5281151 (1994-01-01), Arima et al.
patent: 5320976 (1994-06-01), Chin et al.
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5352623 (1994-10-01), Kamiyama
patent: 5374578 (1994-12-01), Patel et al.
patent: 5381040 (1995-01-01), Sun et al.
patent: 5385857 (1995-01-01), Solo De Zaldivar
patent: 5399890 (1995-03-01), Okada et al.
patent: 5414655 (1995-05-01), Ozaki et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5438008 (1995-08-01), Ema
patent: 5439840 (1995-08-01), Jones, Jr. et al.
patent: 5495117 (1996-02-01), Larson
patent: 5504029 (1996-04-01), Murata et al.
patent: 5519239 (1996-05-01), Chu
patent: 5567636 (1996-10-01), Jones, Jr.
patent: 5578867 (1996-11-01), Argos
patent: 5583068 (1996-12-01), Jones, Jr. et al.
patent: 5614439 (1997-03-01), Murooka et al.
patent: 5616959 (1997-04-01), Jeng
patent: 5631182 (1997-05-01), Suwanai et al.
patent: 5675185 (1997-10-01), Chen et al.
patent: 5686760 (1997-11-01), Miyakawa
patent: 5716875 (1998-02-01), Jones, Jr. et al.
patent: 5726083 (1998-03-01), Takaishi
patent: 5759889 (1998-06-01), Sakao
Hayashi Yoshihiro
Saito Shinobu
Takeuchi Tsuneo
Tanabe Nobuhiro
Brown Peter Toby
NEC Corporation
Thomas Toniae M.
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