Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-03
2006-01-03
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257S412000, C257S413000
Reexamination Certificate
active
06982465
ABSTRACT:
The present invention provides a semiconductor device including n-channel field effect transistors and p-channel field effect transistors all of which have excellent drain current characteristics.In a semiconductor device including an n-channel field effect transistor10and a p-channel field effect transistor30, a stress control film19covering a gate electrode15of the n-channel field effect transistor10undergoes film stress mainly composed of tensile stress. A stress control film39covering a gate electrode15of the p-channel field effect transistor30undergoes film stress mainly caused by compression stress compared to the film19of the n-channel field effect transistor10. Accordingly, drain current is expected to be improved in both the n-channel field effect transistor and the p-channel field effect transistor. Consequently, the characteristics can be generally improved.
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Ichinose Katsuhiko
Ikeda Shuji
Kumagai Yukihiro
Miura Hideo
Ohta Hiroyuki
Antonelli Terry, Stout and Kraus, LLP
Munson Gene M.
Renesas Technology Corp.
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