Semiconductor device with channel layer comprising different...

Details Semiconductor device with channel layer comprising different... Semiconductor device with channel layer comprising different...

2007-03-20

2010-10-12

Nguyen, Kimberly D (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S204000, C257S202000, C257SE21209, C257SE21679, C257SE29300, C257SE21103

Reexamination Certificate

active

07812396

ABSTRACT:
A semiconductor device having a first semiconductor region and second semiconductor region including impurities formed on an insulating layer formed on a semiconductor substrate, an insulator formed between the first semiconductor region and the second semiconductor region, a first impurity diffusion control film formed on the first semiconductor region and a second impurity diffusion control film formed on the second semiconductor region, a channel layer formed on the first impurity diffusion control film and second impurity diffusion film to cross at right angles with a direction where the first semiconductor region and the second semiconductor region are extended, a gate insulating film formed on the channel layer and a gate electrode formed on the gate insulating layer.

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patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2003/0030074 (2003-02-01), Walker et al.
patent: 2003/0209739 (2003-11-01), Hisamoto et al.
patent: 2005/0070060 (2005-03-01), Walker et al.
patent: 2005/0079675 (2005-04-01), Ilkbahar et al.
patent: 11-312809 (1999-09-01), None

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