Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-27
2010-11-23
Sandvik, Benjamin P (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S330000, C257SE29201
Reexamination Certificate
active
07838364
ABSTRACT:
A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
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Cho Heung-Jae
Hong Kwon
Jang Se-Aug
Kim Tae-Yoon
Kim Yong-Soo
Hynix / Semiconductor Inc.
Sandvik Benjamin P
Townsend and Townsend / and Crew LLP
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