Semiconductor device with bulb-type recessed channel and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S330000, C257SE29201

Reexamination Certificate

active

07838364

ABSTRACT:
A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.

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