Semiconductor device with boundary scanning circuit

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital logic testing

Reexamination Certificate

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Details

C714S726000

Reexamination Certificate

active

06351836

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to facilitation of a test for a semiconductor device (for example, an LSI).
2. Description of the Background Art
A test for a semiconductor device according to the prior art will be described with reference to
FIGS. 19
to
21
.
FIG. 19
shows a large number of semiconductor devices formed on a wafer
1
. The reference numeral
20
denotes a principal plane of a semiconductor substrate of the semiconductor device, and the reference numeral
3
denotes a large. number of pads which are provided on the principal plane
20
of the semiconductor substrate and are conducted to a circuit (not shown) formed on the principal plane
20
of the semiconductor substrate.
FIG. 20
shows a probe card
4
(test jig) which is attached to a tester (not shown) and has a probe needle
5
provided thereon.
FIG. 21
shows a state in which the probe card
4
of
FIG. 20
is in contact with the semiconductor device of FIG.
19
.
The test for the semiconductor device includes a function test and a DC test.
The function test is performed by causing the probe needle
5
to come in contact with all the pads
3
provided in the semiconductor device in FIG.
21
. In this test, the function of the semiconductor device is inspected.
For example, DC tests other than an output voltage test such as a test for a leak current flowing into a pad to be tested (a test object pad) and a contact test (a conduction test) for the test object pad can be performed by causing the probe needle
5
to come in contact with a power pad and a GND (ground) pad for driving the semiconductor device and the test object pad.
The output voltage test can be performed by causing the probe needle
5
to come in contact with the power pad, the GND pad, the test object pad and a pad (setting pad) for setting a state of the test object pad. In this specification, for example, the output voltage test includes a test (a VOH test or a VOL test) for checking a voltage which is actually output from the test object pad in a state in which the semiconductor device is operated by the setting pad to output an “H” or “L” level from the test object pad, a test (an HI-Z test) for deciding whether or not the test object pad is set to have a desired high impedance by the operation of the semiconductor device with the use of the setting pad, and the like.
According to a technique shown in
FIG. 21
, the function test and all the DC tests including the output voltage test can be performed. However, the probe needle
5
is caused to come in contact with all the pads
3
. For this reason, the probe card
4
having the same number of probe needles
5
as the number of pads
3
is required. As a technique in which a test for a semiconductor device having a large number of pads
3
can be performed by the probe card
4
having a small number of probe needles
5
, a boundary scan test has been known.
A test for a semiconductor device using boundary scan according to the prior art will be described with reference to
FIGS. 22
,
23
,
24
a
,
24
b
,
24
c
and
24
d
.
FIGS. 22
,
23
,
24
a
,
24
b
,
24
c
and
24
d
correspond to
FIGS. 19
to
21
, respectively. In
FIG. 22
, the reference numeral
3
a
denotes a pad for supplying power to the semiconductor device, the reference numeral
3
b
denotes a pad for supplying a GND to the semiconductor device, TCLK denotes a pad for inputting a clock signal, TMS denotes a pad for setting a test mode, TDI denotes a pad for inputting serial data, and TDO denotes a pad for outputting the serial data.
The pads
3
a
and
3
b
form a set of driving pads
3
ab
for supplying a driving voltage of the semiconductor device. The pads TCLK, TMS, TDI and TDO form a set of boundary scanning pads BSP for performing the boundary scan test.
A large number of pads provided on the principal plane
20
of the semiconductor substrate are generally referred to as the pads
3
. The pads
3
include the boundary scanning pads BSP and the driving pads
3
ab.
The boundary scanning pads BSP are not always formed by these four kinds of pads. In some cases, a pad which serves to reset a circuit for performing the boundary scan on an inside of the semiconductor device or the like is added to the boundary scanning pads BSP.
Furthermore, a plurality of pads arranged along a side of the principal plane
20
of the semiconductor substrate is referred to as a pad string.
For the boundary scan, it is sufficient that the probe needle
5
comes in contact with the pads
3
a
and
3
b
and the boundary scanning pads BSP. Therefore, even if a small number of probe needles
5
are provided, the function test can be performed.
As shown in
FIG. 22
, the adjacent pads
3
are provided with an equal space (pad pitch), all the pads forming the boundary scanning pads BSP are included in one pad string of the principal plane
20
of the semiconductor substrate, the pads
3
a
and
3
b
are included in each pad string of the principal plane
20
of the semiconductor substrate, and the probe needle
5
is not provided on the probe card
4
corresponding to all the pads
3
of the principal plane
20
of the semiconductor substrate but is provided in only a portion corresponding to one pad string of the principal plane
20
of the semiconductor substrate as shown in FIG.
23
. With such structures of the principal plane
20
of the semiconductor substrate and the probe card
4
, any of four pad strings of the principal plane
20
of the semiconductor substrate which includes the boundary scanning pads BSP is first caused to come in contact with the probe needle
5
so that the function test and the DC test including the output voltage test for each pad
3
with which the probe needle
5
is in contact can be performed (
FIG. 24
a
), and the principal plane
20
of the semiconductor substrate is then rotated by
90
degrees so that the DC tests other than the output voltage test for each pad
3
can be performed for three residual pad strings (
FIGS. 24
b
to
24
d
).
Referring to
FIGS. 24
b
,
24
c
and
24
d
, however, the probe needle
5
does not come in contact with the boundary scanning pads BSP. Therefore, the output voltage test using the boundary scanning pads BSP as setting pads cannot be performed for the three residual pad strings. Consequently, the test is incompletely performed.
SUMMARY OF THE INVENTION
A first aspect of the present invention is directed to a semiconductor device comprising a semiconductor substrate provided with a boundary scan test circuit having an I/O pad selecting function, and a large number of pads provided on a principal plane of the semiconductor substrate and conducted to a boundary scan test circuit having the I/O pad selecting function, the principal plane of the semiconductor substrate having a plurality of areas with which a test jig comes in contact, the pads including at least one set of driving pads for supplying a driving voltage of the semiconductor device, and at least one set of boundary scanning pads for performing a boundary scan test, and the at least one set of driving pads and the at least one set of boundary scanning pads being placed in positions where the test jig can come in contact with any of the areas.
A second aspect of the present invention is directed to the semiconductor device, wherein plural sets of driving pads are provided corresponding to the areas and are included in the respective areas, and plural sets of boundary scanning pads are provided corresponding to the areas and are included in the respective areas.
A third aspect of the present invention is directed to the semiconductor device, wherein the pads included in each of the areas are arranged along a side of the principal plane of the semiconductor substrate.
A fourth aspect of the present invention is directed to the semiconductor device, wherein the areas have a common region to be used for all of them in common, and the one set of boundary scanning pads are included in the common region.
A fifth aspect of the present invention is directed to

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