Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-08-16
2011-08-16
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S438000, C438S433000, C257S217000, C257S379000, C257S350000, C257SE21549
Reexamination Certificate
active
07998830
ABSTRACT:
A semiconductor device having a core device with a high-k gate dielectric and an I/O device with a silicon dioxide or other non-high-k gate dielectric, and a method of fabricating such a device. A core well and an I/O well are created in a semiconductor substrate and separated by an isolation structure. An I/O device is formed over the I/O well and has a silicon dioxide or a low-k gate dielectric. A resistor may be formed on an isolation structure adjacent to the core well. A core-well device such as a transistor is formed over the core well, and has a high-k gate dielectric. In some embodiments, a p-type I/O well and an n-type I/O well are created. In a preferred embodiment, the I/O device or devices are formed prior to forming the core device and protected with a sacrificial layer until the core device is fabricated.
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Cheng Chung Long
Chuang Harry
Chung Sheng-Chen
Liang Mong-Song
Thei Kong-Beng
Green Telly D
Slater & Matsil L.L.P.
Smith Zandra
Taiwan Semiconductor Manufacturing Company , Ltd.
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