Semiconductor device with both I/O and core components and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S379000, C257S350000, C257SE21549, C438S424000, C438S438000

Reexamination Certificate

active

07868361

ABSTRACT:
A semiconductor device having a core device with a high-k gate dielectric and an I/O device with a silicon dioxide or other non-high-k gate dielectric, and a method of fabricating such a device. A core well and an I/O well are created in a semiconductor substrate and separated by an isolation structure. An I/O device is formed over the I/O well and has a silicon dioxide or a low-k gate dielectric. A resistor may be formed on an isolation structure adjacent to the core well. A core-well device such as a transistor is formed over the core well, and has a high-k gate dielectric. In some embodiments, a p-type I/O well and an n-type I/O well are created. In a preferred embodiment, the I/O device or devices are formed prior to forming the core device and protected with a sacrificial layer until the core device is fabricated.

REFERENCES:
patent: 7572712 (2009-08-01), Chong et al.
patent: 2004/0245577 (2004-12-01), Bhattacharyya
patent: 2005/0116360 (2005-06-01), Huang et al.
patent: 2005/0260807 (2005-11-01), Orlowski et al.
patent: 2006/0148153 (2006-07-01), Kwon et al.
patent: 2006/0258123 (2006-11-01), Forbes
patent: 2007/0145487 (2007-06-01), Kavalieros et al.
patent: 2008/0124878 (2008-05-01), Cook et al.

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