Semiconductor device with asymmetric pocket implants

Details Semiconductor device with asymmetric pocket implants Semiconductor device with asymmetric pocket implants

2007-08-07

2007-08-07

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S525000, C438S526000, C438S527000, C257SE21536

Reexamination Certificate

active

11245377

ABSTRACT:
A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.

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Okanaka et al., “Potential Design and Transport Property of 0.1- um MOSFET with Asymmetric Channel Profile”, 1997 IEEE, vol. 44, No. 4, pp. 595-600.

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