Semiconductor device with a vertical transistor

Details Semiconductor device with a vertical transistor Semiconductor device with a vertical transistor

2007-03-20

2007-03-20

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S067000, C257S330000, C257S331000, C257SE27091

Reexamination Certificate

active

10849211

ABSTRACT:
A semiconductor device which, even when a vertical transistor is adopted, is able to prevent a product yield from decreasing and performance from deteriorating, and at the same time, to achieve high-density integration of chips and high performance. The semiconductor device includes: a semiconductor substrate; a tower-like gate pillar formed on the semiconductor substrate via an insulation layer and including a channel region formed so as to be positioned between impurity diffusion regions in a vertically extended direction with respect to a principal side of the substrate; a gate insulation film formed on an outer surface of the gate pillar; and a gate electrode film including multiple conductive layers formed on an outer surface of the gate insulation film.

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