Semiconductor device with a piezoresistive pressure sensor

Details Semiconductor device with a piezoresistive pressure sensor Semiconductor device with a piezoresistive pressure sensor

1995-04-03

1996-05-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257418, 257419, 257420, 257619, 73720, 73721, H01L 2982

Patent

active

055148980

ABSTRACT:
A semiconductor device comprises a piezoresistive pressure sensor (12), which has a membrane (14), which is constituted by a conducting epitaxy layer (16), which is applied to a conducting semiconductor substrate (18) of the opposite conductivity. On the outer surface (20) of the membrane facing away from the semiconductor substrate (18) at least one piezoresistor (22) is incorporated. Between the semiconductor substrate (18) and the epitaxy layer (16) an annularly structured intermediate layer (28) is incorporated, which defines a region (26'), adjoining the inner surface (24) of the membrane, of an opening (26) extending through the semiconductor substrate (18). This opening (26) is produced by anisotropic semiconductor etching, the intermediate layer (28) having a conductivity which is opposite to that of the semiconductor substrate so that this intermediate layer (28) functions as an etch stopping means and is not attacked by the etchant.

REFERENCES:
patent: 4588472 (1986-05-01), Shimizu
patent: 4672411 (1987-06-01), Shimizu et al.
patent: 5095401 (1992-03-01), Zavracky et al.
patent: 5296730 (1994-03-01), Takano et al.
Kayal et al., "Anwendungs spezfische Intelligente Sensoren (ASIS`)", Electronik, Apr. 1988, pp. 112-117.

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