Semiconductor device with a peeling prevention layer

Details Semiconductor device with a peeling prevention layer Semiconductor device with a peeling prevention layer

2008-06-03

2008-06-03

Chu, Chris C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

C257SE23134, C257S773000, C257S774000, C257S750000, C257S797000, 43, 43

Reexamination Certificate

active

07382037

ABSTRACT:
The invention is directed to improvement of reliability of a semiconductor device having penetrating electrodes by preventing a protection film and an insulation film peeling. A peeling prevention layer for preventing an insulation film and a protection layer peeling is formed in corner portions of the semiconductor device. The peeling prevention layer can increase its peeling prevention effect more when formed in a vacant space of the semiconductor device other than the corner portions, for example, between ball-shaped conductive terminals. In a cross section of the semiconductor device, the peeling prevention layer is formed on the insulation film on the back surface of the semiconductor substrate, and the protection layer formed of a solder resist or the like is formed covering the insulation film and the peeling prevention layer. The peeling prevention layer has a lamination structure of a barrier seed layer and a copper layer formed thereon when formed by an electrolytic plating method.

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