Semiconductor device with a non-volatile memory and resistor

Details Semiconductor device with a non-volatile memory and resistor Semiconductor device with a non-volatile memory and resistor

2005-07-06

2011-10-25

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S321000, C257S536000, C257S537000, C257S538000, C257SE27009, C257SE27016, C257S379000, C257S380000, C257S381000

Reexamination Certificate

active

08044450

ABSTRACT:
A semiconductor device comprising a resistance element with a high resistance and high resistance accuracy and a non-volatile semiconductor storage element is rationally realized by comprising the non-volatile semiconductor storage element comprising a first isolation formed to isolate a first semiconductor area, a first insulator, and a first electrode in a self-aligned manner, and a second electrode, and the resistance element comprising a second isolation formed to isolate a second semiconductor area, a third insulator and a conductor layer in a self-aligned manner, and third and fourth electrodes formed on each end of the conductor layer via a fourth insulator, and connected with the conductor layer. The conductor layer or the third and fourth electrodes include the same material with the first or second electrode, respectively.

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