Semiconductor device with a multilayered contact structure havin

Details Semiconductor device with a multilayered contact structure havin Semiconductor device with a multilayered contact structure havin

1994-01-28

1995-05-09

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257755, 257757, 257758, 257763, 257764, 257768, 257770, 257774, 257781, H01L 2348, H01L 2944, H01L 2952, H01L 2910

Patent

active

054143020

ABSTRACT:
A high-density semiconductor memory device has a self-aligning contact structure for electrical connection between lower and upper conductive layers, and an inter-insulating layer with a via for forming the contact structure. The contact structure has a contact pad including a first conductive layer electrically connected with the lower conductive layer within the via and formed on a predetermined portion of the inter-insulating layer around the groove, a planarizing material filling up the groove formed on the first conductive layer, and second conductive layers formed on the planarizing material and exposed first conductive layer.

REFERENCES:
patent: 4739384 (1988-04-01), Higashi et al.
patent: 4795722 (1989-01-01), Welch et al.
Yamanaka, T., et al., "A 5.9 .mu.m.sup.2 Super Low Power SRAM Cell Using A New Phase-Shift Lithography", IEDM, 477-480 (1990).
Kawamoto, Y., et al., "A 1.28 .mu.m.sup.2 Bit Line Shielded Memory Cell Technology for 64 Mb DRAMs", Symposium on VLSI Technology, 13-14 (1990).

Affiliated with

Also associated with

Rating

Semiconductor device with a multilayered contact structure havin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a multilayered contact structure havin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a multilayered contact structure havin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1708219