Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Parker, Ken A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000, C257SE29027
Reexamination Certificate
active
07989888
ABSTRACT:
Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
REFERENCES:
patent: 7361970 (2008-04-01), Barthelmess et al.
patent: 7514750 (2009-04-01), Mauder et al.
patent: 2008/0283868 (2008-11-01), Schulze et al.
Niedernostheide Franz-Josef
Pfirsch Frank
Schulze Hans-Joachim
Voss Stephan
Diaz José R
Infineon Technologies Autria AG
Parker Ken A
Schwegman Lundberg & Woessner, P.A.
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