Static information storage and retrieval – Read/write circuit – Complementing/balancing
Reexamination Certificate
2005-03-01
2005-03-01
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Complementing/balancing
C365S230060, C365S189050
Reexamination Certificate
active
06862235
ABSTRACT:
There is disclosed a write operation of a MRAM in which a current necessary for inverting magnetization of an MTJ element has to be passed through a data line and therefore current consumption is large. The write operation comprises: comparing input data DI with read data GO read from a memory cell array and encoding the input data DI to form write data GI by a data encoder WC; and decoding the read data GO by a data decoder RD to form output data DO. In a nonvolatile semiconductor memory in which the current is passed through the data line to write data into a memory cell, the number of bits to be written during the write operation is reduced, and the current consumption can be reduced. This can realize the MRAM including a low-power highly-integrated memory.
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Matsuoka Hideyuki
Sakata Takeshi
Elms Richard
Hitachi , Ltd.
Nguyen Tuan T.
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