Semiconductor device undergoing defect detection test

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S226000, C365S201000

Reexamination Certificate

active

07408818

ABSTRACT:
A semiconductor device has a first operation mode and a second operation mode in which power supply with a higher voltage value than that in the first operation mode is provided. The semiconductor device includes a memory portion having memory cells for storing data and a power supply circuit portion supplying a first voltage and a second voltage to the memory portion. The memory portion writes or reads data to or from the memory cells based on the first voltage and the second voltage, and the power supply circuit portion provides a smaller voltage difference between the first voltage and the second voltage in the second operation mode as compared with the voltage difference in the first operation mode.

REFERENCES:
patent: 5877978 (1999-03-01), Morishita et al.
patent: 6205067 (2001-03-01), Tsukude
patent: 7023754 (2006-04-01), Akiyama et al.
patent: 6-119776 (1994-04-01), None
patent: 7-260874 (1995-10-01), None
patent: 10-63354 (1998-03-01), None
patent: 10-92200 (1998-04-01), None
patent: 11-296241 (1999-10-01), None
patent: 2002-298599 (2002-10-01), None
patent: 2004-152399 (2004-05-01), None
patent: 2005-249661 (2005-09-01), None

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