Semiconductor device that includes a gate insulating layer...

Details Semiconductor device that includes a gate insulating layer... Semiconductor device that includes a gate insulating layer...

2007-05-29

2007-05-29

Lebentritt, Michael (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S223000

Reexamination Certificate

active

10960015

ABSTRACT:
In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial cost. This invention provides a method for forming an impurity region in a semiconductor layer303by doping an impurity element into the semiconductor layer self-aligningly using as a mask the upper layer (a second conducting film306) of a gate electrode formed in two layers. The impurity element is doped into the semiconductor layer through the lower layer of the gate electrode (a first conducting film305), and through a gate insulating film304. By this means, an LDD region313of a GOLD structure is formed in the semiconductor layer303.

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