Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-08
2008-04-08
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S157000, C257SE21122
Reexamination Certificate
active
10711416
ABSTRACT:
Semiconductor structure and method to simultaneously achieve optimal stress type and current flow for both nFET and pFET devices, and for gates orientated in one direction, are disclosed. One embodiment of the method includes bonding a first wafer having a first surface direction and a first surface orientation atop a second wafer having a different second surface orientation and a different second surface direction; forming an opening through the first wafer to the second wafer; and forming a region in the opening coplanar with a surface of the first wafer, wherein the region has the second surface orientation and the second surface direction. The semiconductor device structure includes at least two active regions having different surface directions, each active region including one of a plurality of nFETs and a plurality of pFETs, and wherein a gate electrode orientation is such that the nFETs and the pFETs are substantially parallel to each other.
REFERENCES:
patent: 4908328 (1990-03-01), Hu et al.
patent: 5670388 (1997-09-01), Machesney et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2005/0285187 (2005-12-01), Bryant et al.
Doris Bruce B.
Gluschenkov Oleg
Ieong Mei-Kei
Leobandung Effendi
Zhu Huilong
Hoffman, Warnick & D'Alessandro
International Business Machines - Corporation
Li Todd M.C.
Louie Wai-Sing
LandOfFree
Semiconductor device structure with active regions having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device structure with active regions having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device structure with active regions having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3950106