Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent
1991-07-02
1993-04-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
257703, 361386, 361388, H01L 2302, H01L 3902
Patent
active
052006417
ABSTRACT:
A high frequency and high power semiconductor device includes a semiconductor substrate having an active element on the front surface and a radiating metal layer for radiating heat generated by the active element on the rear surface of the substrate. The radiating metal layer is disposed on a part of the rear surface of the substrate directly opposite the active element. Further, a dispersion layer having a linear expansion coefficient equal to that of the substrate material and differing from that of the radiating metal layer is disposed on the rear surface of said semiconductor substrate but not directly opposite the active element.
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Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
Ostrowski David
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