Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-17
2009-10-06
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S202000, C257S206000, C257S347000, C257S351000, C257SE27098
Reexamination Certificate
active
07598570
ABSTRACT:
A semiconductor device according to the present invention is provided with an SOI substrate, an active region, a first insulating film (complete separation insulating film), a second insulating film (partial separation insulating film), and a contact portion. Here, the active region is formed within the surface of the SOI layer. In addition, the first insulating film is formed on one side of the active region from the surface of SOI layer to the buried insulating film. In addition, the second insulating film is formed on the other side of the active region from the surface of SOI layer to a predetermined depth that does not reach the buried insulating film. In addition, the contact portion is provided toward the side where the first insulating film exists, off the center of the active region in a plan view.
REFERENCES:
patent: 6787855 (2004-09-01), Hirano et al.
patent: 7271454 (2007-09-01), Hirano et al.
patent: 2002/0112137 (2002-08-01), Houston
Mukesh Khare, et al., “A High Performance 90nm SOI Technology with 0.992 μm26T-SRAM Cell”, 2002 IEEE.
Y. Hirano, et al., “Bulk-Layout-Compatible 0.18 μm SOI-CMOS Technology Using Body-Fixed Partial Trench Isolation (PTI)”, 1999 IEEE International SOI Conference, Oct. 1999, pp. 131-132.
Hirano Yuuichi
Ipposhi Takashi
Diaz José R
Oblon, Spivak, McCellland, Maier & Neustadt, L.L.P.
Parker Kenneth A
Renesas Technology Corp.
LandOfFree
Semiconductor device, SRAM and manufacturing method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, SRAM and manufacturing method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, SRAM and manufacturing method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4065563