Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-05-16
2006-05-16
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S771000, C438S776000, C438S788000, C438S792000
Reexamination Certificate
active
07045447
ABSTRACT:
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.
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http://farside.ph.utexas.edu/teaching/em1/lectures
ode65.html
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Ogawa Unryu
Terasaki Tadashi
Yamakado Naoya
Yashima Shinji
Birch & Stewart Kolasch & Birch, LLP
Brewster William M.
Hitachi Kokusai Electric Inc.
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