Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-01
2011-03-01
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21597, C257S621000
Reexamination Certificate
active
07897510
ABSTRACT:
A method for manufacturing a package which includes: an etching step of etching a silicon substrate, and forming a via hole penetrating through the silicon substrate; and a step of embedding an electrically conductive material in the via hole, and forming a via plug, characterized in that the etching step includes a first etching step of forming the via hole in a straight shape, and a second etching step of forming the via hole in a taper shape.
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Higashi Mitsutoshi
Koizumi Naoyuki
Murayama Kei
Shiraishi Akinori
Sunohara Masahiro
Drinker Biddle & Reath LLP
Fulk Steven J
Shinko Electric Industries Co. Ltd.
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