Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-17
2000-07-18
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257168, 257495, 257496, 257173, 257 77, 257135, H01L 2978, H01L 29745
Patent
active
060911085
ABSTRACT:
A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.
REFERENCES:
patent: 3571675 (1971-03-01), Faust
patent: 4003072 (1977-01-01), Matsushita et al.
patent: 4060821 (1977-11-01), Houston et al.
patent: 4132996 (1979-01-01), Baliga
patent: 4151540 (1979-04-01), Sander et al.
patent: 4379726 (1983-04-01), Kumamaru et al.
patent: 4821095 (1989-04-01), Temple
patent: 4984049 (1991-01-01), Nishizawa et al.
patent: 5191396 (1993-03-01), Lidow et al.
patent: 5218226 (1993-06-01), Slatter et al.
patent: 5223737 (1993-06-01), Canclini
patent: 5389815 (1995-02-01), Takahashi
patent: 5514608 (1996-05-01), Williams et al.
patent: 5569941 (1996-10-01), Takahashi
patent: 5681762 (1997-10-01), Baliga
patent: 5742076 (1998-04-01), Sridevan et al.
patent: 5895939 (1999-04-01), Ueno
Bakowski Mietek
Bijlenga Bo
Gustafsson Ulf
Harris Christopher
Konstantinov Andrey
ABB Research Ltd.
Jackson, Jr. Jerome
LandOfFree
Semiconductor device of SiC having an insulated gate and buried does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device of SiC having an insulated gate and buried , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device of SiC having an insulated gate and buried will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2039313