Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-19
2008-10-21
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S751000
Reexamination Certificate
active
07439176
ABSTRACT:
In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. After forming the diffusion barrier layer, a heat treatment process may be additionally performed thereon. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.
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Kim Dae-Yong
Lee Jang-Hee
Park Hee-Sook
Park Jae-Hwa
Lee Calvin
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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