Semiconductor device, method of manufacturing the same, and...

Details Semiconductor device, method of manufacturing the same, and... Semiconductor device, method of manufacturing the same, and...

2011-08-02

2011-08-02

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21430, C257SE29121

Reexamination Certificate

active

07989299

ABSTRACT:
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

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T. Ghani et al., “A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors” IEDM Tech. Dig., (2003). Cited in Specification.
Japanese Office Action dated Feb. 22, 2011, issued in corresponding Japanese Patent Application No. 2004-187053.

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