Semiconductor device method for manufacturing

Details Semiconductor device method for manufacturing Semiconductor device method for manufacturing

1997-06-11

2000-02-01

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438258, 438625, 438592, H01L 218238, H01L 214763

Patent

active

060202297

ABSTRACT:
There are provided a semiconductor device and a method for manufacturing the same in which a thin film polysilicon film having a small parasitic capacitance which is required for attaining the high-speed operation and high reliability can be used as a resistance element, the process margin can be increased without increasing the number of manufacturing steps, and defects due to leakage between the resistance element and the underlying substrate can be eliminated so as to ensure the high manufacturing yield. In a semiconductor device having a conductive film formed over the surface of a semiconductor substrate with a first insulating film disposed therebetween and a metal wiring layer connected to the conductive film via a contact hole formed in a second insulating film which is formed on the conductive film, an etching stopper film having a selective etching ratio with respect to the second insulating film is formed in an area directly below the contact hole with a third insulating film disposed therebetween.

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