Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-07-23
2010-11-16
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257S635000, C257SE21192, C257SE29132
Reexamination Certificate
active
07833891
ABSTRACT:
A semiconductor device and method is provided that has an oxygen diffusion barrier layer between a high-k dielectric and BOX. The method includes depositing a diffusion barrier layer on a BOX layer and gate structure and etching a portion of the diffusion barrier layer from sidewalls of the gate structure. The method further includes depositing a high-k dielectric on the diffusion barrier layer and the gate structure.
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Cheng Kagguo
Doris Bruce B.
Abate Joseph P.
International Business Machines - Corporation
Roberts Mlotkowski Safran & Cole P.C.
Smith Matthew S
Swanson Walter H
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