Semiconductor device manufacturing method and target...

Details Semiconductor device manufacturing method and target... Semiconductor device manufacturing method and target...

2011-08-23

2011-08-23

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S627000, C438S706000, C438S725000, C257SE21585

Reexamination Certificate

active

08003535

ABSTRACT:
A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film.

REFERENCES:
patent: 2009/0042384 (2009-02-01), Miyoshi et al.
patent: 2001-271192 (2001-10-01), None
patent: 2005-330546 (2005-12-01), None
patent: 2008-31541 (2008-02-01), None

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