Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2005-12-23

2009-10-06

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S386000, C438S399000

Reexamination Certificate

active

07598138

ABSTRACT:
Provided is a semiconductor device manufacturing method including the steps of: forming an n-type impurity diffusion region by ion-implanting arsenic into a capacitor formation region of a silicon substrate under a condition that a beam current is not less than 1 μA but less than 3 mA; forming a capacitor dielectric film on the capacitor formation region of the silicon substrate; and forming a capacitor upper electrode on the capacitor dielectric film.

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Korean Office Action mailed Nov. 20, 2006, issued in corresponding Korean Patent Application No. 10-2006-0004854.

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