Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2005-07-13

2008-08-19

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S682000

Reexamination Certificate

active

07413956

ABSTRACT:
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor substrate, in which active and inactive regions are separated by a field oxidation film; source/drain junctions contacting the field oxidation film and formed in the active regions of the semiconductor substrates; a buffer oxidation film formed at designated portions of the source/drain junctions, and a gate electrode formed on the semiconductor substrate adjacent to the buffer oxidation film; and a silicide film formed at designated portions of the source/drain junctions and the upper surface of the gate electrode.

REFERENCES:
patent: 6084280 (2000-07-01), Gardner et al.
patent: 6335550 (2002-01-01), Miyoshi et al.
patent: 6503833 (2003-01-01), Ajmera et al.

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