Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2007-07-10
2007-07-10
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S196000, C438S275000
Reexamination Certificate
active
10983618
ABSTRACT:
A plurality of first wiring structures of a first width are arranged periodically at first intervals. A second wiring structure is formed next to one of the first wiring structures. The lower part of the second wiring structure has a second width substantially equal to the sum of n times the first width of the first wiring structure (n is a positive integer equal to two or more) and (n−1) times the first interval.
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