Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2007-01-23

2007-01-23

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S236000, C438S628000, C257SE21575

Reexamination Certificate

active

10854162

ABSTRACT:
A semiconductor device manufacturing method is provided which is capable of suppressing variation of the resistance value of resistive interconnection and preventing variation of transistor performance. A gate electrode and a resistive interconnection are formed on a substrate and impurity ions are implanted into the surface of the substrate to form source/drain regions (diffusion layers:1A,1B) on both sides of the gate electrode. Also, impurity ions are implanted to control the resistance value of the resistive interconnection. Next, a sidewall film is formed to cover the resistive interconnection. Then a heat treatment is performed to activate the source/drain regions (diffusion layers:1A,1B).

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