Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-03-01
2005-03-01
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S787000, C438S763000, C438S276000, C438S778000
Reexamination Certificate
active
06861372
ABSTRACT:
A substrate is provided having first and second formation areas. An oxide film is formed on both formation areas. An oxidation resistance film is then formed on the oxide film. The second formation area is masked by disposing a photoresist on the oxidation resistance film above the second formation area. The oxidation resistant film is removed from the first formation area and then the photoresist above the second formation area is removed. The oxide film above the first formation area is removed while using the oxidation resistant film above the second formation area as a mask. A first oxide film is formed on the first formation area followed by the removal of the oxidation resistance film above the second formation area. Subsequently, a second oxide film is formed on the second formation area. The first oxide film is designed to have thickness different from the second oxide film.
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Korean Office Action dated May 27, 2003.
Furuya Shigeyuki
Taniguchi Toshimitsu
Anya Igwe U.
Smith Matthew
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