Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2011-07-12

2011-07-12

Tran, Binh X (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C034S578000

Reexamination Certificate

active

07976716

ABSTRACT:
A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

REFERENCES:
patent: 5083373 (1992-01-01), Hamburgen
patent: 5194118 (1993-03-01), Shinohara
patent: 5595337 (1997-01-01), Demaray et al.
patent: 5640852 (1997-06-01), Atlas
patent: 6173508 (2001-01-01), Strohmeyer, Jr.
patent: 6391147 (2002-05-01), Imafuku et al.
patent: 6440221 (2002-08-01), Shamouilian et al.
patent: 2001/0030024 (2001-10-01), Sago et al.
patent: 6-172988 (1994-06-01), None
patent: 8-031755 (1996-02-01), None
patent: 8-159681 (1996-06-01), None
patent: 9-293809 (1997-11-01), None
patent: 10-047879 (1998-02-01), None
patent: WO 99/41778 (1999-08-01), None
Chinese Office Action dated May 27, 2005 (with English translation).
Japanese Office Action dated Jul. 4, 2006 (with English translation).

Affiliated with

Also associated with

Rating

Semiconductor device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2680348