Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-03
2000-06-13
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257372, 257375, 257376, 257355, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
060752718
ABSTRACT:
A semiconductor device (10) having a stacked-gate buffer (30) wherein the stacked-gate buffer (30) has a substrate (65) and a top substrate region (70) both with the same first conductivity type. The buffer (30) also has two transistors (95.105), each with a current carrying electrode and a control electrode (90, 100). A deep doped region (120) lies between the first (90) and second (100) control electrodes where the deep doped region (120) is another current carrying electrode for the first transistor (95) and another current carrying electrode for the second transistor (105) and the deep doped region (120) has a second conductivity that is opposite the first conductivity type. A deeper doped region (80) is also part of the stacked-gate buffer which has a second conductivity type and lies between the first (90) and second (100) control electrodes and is deeper than the deep doped region (120). A method of forming the device is also provided herein.
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Fenty Jesse A.
Motorola Inc.
Saadat Mahshid
LandOfFree
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