Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-18
2008-11-18
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21561
Reexamination Certificate
active
07452774
ABSTRACT:
A semiconductor device comprises a first transistor having a composite gate structure containing a lamination of a first polycrystalline silicon film, an interlayer insulating film, and a second polycrystalline silicon film; and a second transistor having a single gate structure containing a lamination of a third polycrystalline silicon film and a fourth polycrystalline silicon film, wherein the first polycrystalline silicon film and the third polycrystalline silicon film have substantially the same thickness; the first polycrystalline silicon film and the third polycrystalline silicon film have different impurity concentrations controlled independently of each other; the second polycrystalline silicon film and the fourth polycrystalline silicon film have substantially the same thickness, and the second polycrystalline silicon film, the fourth polycrystalline silicon film, and the third polycrystalline silicon film have substantially the same impurity concentration. Also, a method for manufacturing the above-described semiconductor device is described.
REFERENCES:
patent: 4210993 (1980-07-01), Sunami
patent: 4348746 (1982-09-01), Okabayashi et al.
patent: 4453388 (1984-06-01), Baker et al.
patent: 4597159 (1986-07-01), Usami et al.
patent: 4703551 (1987-11-01), Szluk et al.
patent: 4766088 (1988-08-01), Kono et al.
patent: 4894802 (1990-01-01), Hisia et al.
patent: 4958321 (1990-09-01), Chang
patent: 5034798 (1991-07-01), Ohsima
patent: 5200636 (1993-04-01), Uemura et al.
patent: 5229631 (1993-07-01), Woo
patent: 5321287 (1994-06-01), Uemura et al.
patent: 5449629 (1995-09-01), Kajita
patent: 5470771 (1995-11-01), Fujii et al.
patent: 5493139 (1996-02-01), Akiyama et al.
patent: 5541876 (1996-07-01), Hsue et al.
patent: 5637897 (1997-06-01), Oyama
patent: 5691561 (1997-11-01), Goto
patent: 5793673 (1998-08-01), Pio et al.
patent: 5925907 (1999-07-01), Hazama
patent: 6103576 (2000-08-01), Deustcher et al.
patent: 6121670 (2000-09-01), Hisamune
patent: 6157575 (2000-12-01), Choi
patent: 6365457 (2002-04-01), Choi
patent: 6417086 (2002-07-01), Osari
patent: 6451643 (2002-09-01), Komori et al.
patent: 6525370 (2003-02-01), Hazama
patent: 6787844 (2004-09-01), Hazama
patent: 6913973 (2005-07-01), Hazama
patent: 7312496 (2007-12-01), Hazama
patent: 2007/0029596 (2007-02-01), Hazama
patent: 2007/0045714 (2007-03-01), Hazama
patent: 00581312 (1994-02-01), None
patent: 59-74677 (1984-04-01), None
patent: 2-3289 (1990-01-01), None
patent: 2001176 (1990-01-01), None
patent: 5-48046 (1993-02-01), None
patent: 5048046 (1993-02-01), None
patent: 6268213 (1994-09-01), None
patent: 7-183411 (1995-07-01), None
patent: 9-153601 (1997-06-01), None
Booth Richard A.
Pegre Semiconductors LLC
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