Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S640000, C438S199000, C438S791000
Reexamination Certificate
active
07115954
ABSTRACT:
A semiconductor device has an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the main surface of the semiconductor substrate, which second region is different from the first region. An internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is different from an internal stress generated in the channel formation region of the p channel conductivity type field effect transistor. The internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is a tensile stress, while the internal stress generated in the channel formation region of the p channel conductivity type field effect transistor is a compressive stress.
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“A New Aspect of Mechanical Stress Effects in Scaled MOS Devices” Akemi Hamada et al., IEEE Transactions on Electron Devices, vol. 38 No. 4, Apr. 1991, pp. 895-900.
Ichinose Katsuhiko
Nonaka Yusuke
Ooki Nagatoshi
Shimizu Akihiro
Antonelli, Terry Stout and Kraus, LLP.
Pham Hoai
Renesas Technology Corp.
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