Semiconductor device including nonvolatile memory and method...

Details Semiconductor device including nonvolatile memory and method... Semiconductor device including nonvolatile memory and method...

2007-10-16

2007-10-16

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S200000, C438S221000, C438S294000, C257SE21409

Reexamination Certificate

active

11318501

ABSTRACT:
A semiconductor device including a nonvolatile memory and the fabrication method of the same is described formed on a semiconductor substrate. According to the semiconductor device, a second gate electrode film is used for a gate electrode film of a logic circuit, and for a control gate electrode film of a nonvolatile memory. As the second gate electrode film is formed at a relatively later step in fabrication, subsequent thermal process may be avoided. The gate structure is suitable for miniaturization of the transistor in the logic circuit.

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patent: 2002-64157 (2002-02-01), None

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