Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-30
2009-06-09
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S302000, C438S306000, C257SE21235, C257SE21626
Reexamination Certificate
active
07544573
ABSTRACT:
First and second impurity doped regions are formed in a semiconductor substrate. A first gate electrode is formed on the first impurity doped region with a first gate insulation film interposed therebetween. A second gate electrode is formed on the second impurity doped region with a second gate insulation film interposed therebetween. A first sidewall insulation film is formed on either side of the first gate electrode. A second sidewall insulation film has a thickness different from that of the first sidewall insulation film and are formed on either side of the second gate electrode. A third sidewall insulation film is formed on the first sidewall insulation film on the side of the first gate electrode. A fourth sidewall insulation films have a thickness different from that of the third sidewall, insulation film and are formed on the second sidewall insulation film on the side of the second gate electrode.
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K. Ota et al., “Double Offset Implantation Technique for High Performance 80nm CMOSFET with Low Gate Leakage Current”, SEMI Forum 2002, ULSI Technology Seminar, Section 4, pp. 42-47.
Foley & Lardner LLP
Ghyka Alexander G
Kabushiki Kaisha Toshiba
Nikmanesh Seahvosh J
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