Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-11
2005-01-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S248000, C438S424000, C438S433000
Reexamination Certificate
active
06841440
ABSTRACT:
A trench is formed in a substrate and a silicon oxide film which serves as a trench isolation is buried in the trench. The silicon oxide film has no shape sagging from a main surface of the substrate. A channel impurity layer to control a threshold voltage of a MOSFET is formed in the main surface of the substrate. The channel impurity layer is made of P-type layer, having an impurity concentration higher than that of the substrate. A first portion of the channel impurity layer is formed near an opening edge of the trench along a side surface of the trench in the source/drain layer, and more specifically, in the N+-type layer. A second portion of the channel impurity layer is formed deeper than the first portion. A gate insulating film and a gate electrode are formed on the main surface of the substrate.
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Wolf and Tauber; “Silicon Processing for the VLSI Era vol. 1: Process Technology”; p. 298; copyright 1986, Lattice Press; Sunset Beach, CA.
Horita Katsuyuki
Kuroi Takashi
Ueno Syuichi
Fourson George
Renesas Technology Corp.
Toledo Fernando L.
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