Semiconductor device including high-k insulating layer and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S410000, C257S411000, C257S761000, C257S765000, C257SE21679

Reexamination Certificate

active

07456468

ABSTRACT:
A semiconductor memory device a first dopant area and a second dopant area, the first dopant area and the second dopant area disposed in a semiconductor substrate, an insulating layer disposed in contact with the first dopant area and the second dopant area, the insulating layer including a material selected from the group consisting of Hf, Zr, Y, and Ln, and a gate electrode layer disposed on the insulating layer.

REFERENCES:
patent: 6441417 (2002-08-01), Zhang et al.
patent: 2003/0209816 (2003-11-01), Yamaguchi et al.
patent: 2005/0139937 (2005-06-01), Kamiyama et al.
patent: 2005/0263803 (2005-12-01), Takayanagi
patent: 2006/0131672 (2006-06-01), Wang et al.
patent: 2006/0261401 (2006-11-01), Bhattacharyya
patent: 1108613 (2003-05-01), None
patent: 2002-134739 (2002-05-01), None
patent: 2004158810 (2004-06-01), None
patent: 2003-0024897 (2003-03-01), None
patent: 2004-0002818 (2004-01-01), None
patent: 2004-0023528 (2004-03-01), None
patent: 2004-0064965 (2004-07-01), None
English language abstract of Korean Publication No. 2004-0002818.
English language abstract of Korean Publication No. 2004-0023528.
English language abstract of Korean Publication No. 2004-0064965.

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