Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-07
2011-11-08
Gurley, Lynne (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S365000, C257S368000, C257S389000, C438S587000, C438S626000
Reexamination Certificate
active
08053845
ABSTRACT:
In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions.
REFERENCES:
patent: 2005/0285204 (2005-12-01), Kim et al.
patent: 2006/0128082 (2006-06-01), Chuang et al.
patent: 2006/0255394 (2006-11-01), Park
patent: 2007/0117321 (2007-05-01), Park
patent: 10-2001-0038611 (2001-05-01), None
patent: 2002-0036384 (2002-05-01), None
patent: 10-0632655 (2006-09-01), None
Choi Jin-sook
Hong Chang-ki
Jo Sang-youn
Kim Hong-soo
Kwon Byoung-ho
Gurley Lynne
Kearney Naima
Onello & Mello LLP
Samsung Electronics Co,. Ltd.
LandOfFree
Semiconductor device including dummy gate part and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including dummy gate part and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including dummy gate part and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4254243