Semiconductor device including container having epitaxial...

Details Semiconductor device including container having epitaxial... Semiconductor device including container having epitaxial...

2006-07-14

2009-06-16

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C257SE21132, C257SE21461

Reexamination Certificate

active

07547617

ABSTRACT:
Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.

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patent: 6696713 (2004-02-01), Ishibashi
patent: 7115489 (2006-10-01), Ramaswamy et al.
patent: 11233518 (1999-08-01), None

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