Semiconductor device including asymmetric sense amplifier

Details Semiconductor device including asymmetric sense amplifier Semiconductor device including asymmetric sense amplifier

2011-08-30

2011-08-30

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S230030, C365S203000, C365S205000

Reexamination Certificate

active

08009496

ABSTRACT:
A semiconductor device includes an alternating arrangement of memory cell blocks and sense amplifier blocks, such that the sense amplifier blocks include an interior sense amplifier block and a periphery amplifier block. The peripheral amplifier block includes a first sense amplification unit having a first sense amplifier and a second sense amplifier cross-coupled between a bit line and a complementary bit line. The first sense amplifier supplies/receives current to/from the bit line, the second sense amplifier provides/receives current to/from the complementary bit line, and a current driving capability for the first sense amplifier is greater than a current driving capability of the second sense amplifier.

REFERENCES:
patent: 5949256 (1999-09-01), Zhang et al.
patent: 6314028 (2001-11-01), Kono
patent: 6477100 (2002-11-01), Takemura et al.
patent: 07085666 (1995-03-01), None
patent: 1020040000148 (2004-01-01), None

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