Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent
1996-02-06
1998-05-19
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
365204, 365203, H03K 17687
Patent
active
057544808
ABSTRACT:
When a potential D of an output node is drawn out to the level of ground potential GND by an n channel pull-down output transistor, a pull-down gate control transistor is rendered conductive. The output node and the n channel pull-down output transistor conduct.
REFERENCES:
patent: 5535171 (1996-07-01), Kim et al.
patent: 5598371 (1997-01-01), Lee et al.
patent: 5617362 (1997-04-01), Mori et al.
"Digitally Adjustable Resistors in CMOS for High-Performance Applications," by Thaddeus J. Cabara et al., IEEE Journal of Solid-State Circuits, vol. 27, No. 8, Aug. 1992.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Viet Q.
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