Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-07
2010-02-23
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000, C257S331000, C257S332000, C257S333000, C257S334000, C257S401000, C257S510000, C257SE21546, C257SE21553
Reexamination Certificate
active
07667266
ABSTRACT:
A semiconductor device including an active pattern having a channel recess portion, and a method of fabricating the same, are disclosed. In one embodiment, the semiconductor device includes an active pattern including first active regions and a second active region interposed between the first active regions. The active pattern protrudes above a surface of a semiconductor substrate and includes a channel recess portion above the second active region and between the first active regions. A device isolation layer surrounds the active pattern and has a groove exposing side walls of the recessed second active region. A distance between opposing side walls of the first active regions exposed by the channel recess portion is greater than a distance between side walls of the groove. A gate pattern is located in the channel recess portion and extends along the groove.
REFERENCES:
patent: 5396093 (1995-03-01), Lu
patent: 6649975 (2003-11-01), Baliga
patent: 7170133 (2007-01-01), Jang et al.
patent: 7183600 (2007-02-01), Kim et al.
patent: 7217623 (2007-05-01), Kim et al.
patent: 7247887 (2007-07-01), King et al.
patent: 7285466 (2007-10-01), Kim et al.
patent: 7384849 (2008-06-01), Parekh et al.
patent: 7432160 (2008-10-01), Cho et al.
patent: 7442607 (2008-10-01), Kim et al.
patent: 7459358 (2008-12-01), Lee et al.
patent: 7514743 (2009-04-01), Yang
patent: 2005/0056888 (2005-03-01), Youn et al.
patent: 2006/0091482 (2006-05-01), Kim et al.
patent: 2008/0079071 (2008-04-01), Kim
patent: 2008/0169493 (2008-07-01), Lee et al.
patent: 2006-0000275 (2006-01-01), None
patent: 2006-0029549 (2006-04-01), None
patent: 2006-0130322 (2006-12-01), None
English language abstract of Korean Publication No. 2006-0000275.
English language abstract of Korean Publication No. 2006-0029549.
English language abstract of Korean Publication No. 2006-0130322.
Jung Kyoung-Ho
Kahng Jae-Rok
Kim Keun-Nam
Lee Chul
Yoshida Makoto
Samsung Electronics Co,. Ltd.
Soward Ida M
Volentine & Whitt PLLC
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