Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-11
2007-12-11
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S077000, C257S328000, C257S329000, C257S577000
Reexamination Certificate
active
11206212
ABSTRACT:
A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.
REFERENCES:
patent: 4942445 (1990-07-01), Baliga et al.
patent: 6211549 (2001-04-01), Funaki et al.
patent: 6265744 (2001-07-01), Okumura
patent: 6323518 (2001-11-01), Sakamoto et al.
patent: 6781199 (2004-08-01), Takahashi
patent: 7154145 (2006-12-01), Takahashi
patent: 2003/0042538 (2003-03-01), Kumar et al.
patent: 2003/0178672 (2003-09-01), Hatakeyama et al.
patent: 9-508492 (1997-08-01), None
patent: WO 95/18465 (1995-07-01), None
U.S. Appl. No. 11/138,298, filed May 27, 2005.
“Power Device, Power IC Handbook”, 1stedition, published by Corona Publishing Co., Ltd., Jul. 30, 1996.
A.B. Horsfall et al., “Optimisation of a 4H-SiC Enhancement Mode Power JFET”, Materials Science Forum Vols. 433-436 (2003) pp. 777-780.
Kiyoshi Tone et al., “4H-SiC Normally-Off Vertical Junction Field-Effect Transistor With High Current Density”, IEEE Electron Device Letters, vol. 24, No. 7, Jul. 2003.
Malhan Rajesh Kumar
Nakamura Hiroki
Ohyanagi Takasumi
Sakakibara Toshio
Watanabe Atsuo
Antonelli, Terry Stout & Kraus, LLP.
Denso Corporation
Lee Eugene
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